irfn9140 2n7236u document number 4020 issue 1 semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk v gs gate ? source voltage i d continuous drain current (v gs = -10v, t case = 25c) i d continuous drain current (v gs = -10v, t case = 100c) i dm pulsed drain current 1 p d power dissipation @ t case = 25c linear derating factor e as single pulse avalanche energy 2 dv/dt peak diode recovery 3 t j , t stg operating and storage temperature range r jc thermal resistance junction to case 20v ?18a ?11a ?72a 125w 1.0w/c 500mj ?5.0v/ns 300c 1.0c/w mechanical data dimensions in mm (inches)
p?channel power mosfet absolute maximum ratings (t case = 25c unless otherwise stated) features hermetically sealed surface mount package small footprint ? efficient use of pcb space simple drive requirements lightweight high packing densities smd1 (to-276ab) pad 1 ? source pad 2 ? drain pad 3 ? gate notes 1) pulse test: pulse width 300ms, ? 2% 2) @ v dd = ?25v , l 3.1mh , r g = 25 ? , peak i l = ?18a , v gs = -10v, starting t j = 25c 3) @ i sd ?18a , di/dt ?100a/ s , v dd bv dss , t j 150c , suggested r g = 9.1 ? v dss ?100v i d(cont) ?18a r ds(on) 0.20 ? ? note: irf9140smd also available with pins 1 and 3 reversed. semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omi ssions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders.
irfn9140 2n7236u semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk parameter test conditions min. typ. max. unit v gs = 0 i d = ?1ma reference to 25c i d = ?1ma v gs = ?10v i d = ?11a v gs = ?10v i d = ?18a v ds = v gs i d = ?250 a v ds ?15v i ds = ?11a v gs = 0 v ds = 0.8bv dss t j = 125c v gs = ?20v v gs = 20v v gs = 0 v ds = ?25v f = 1mhz v gs = ?10v i d = ?18a v ds = 0.5bv dss i d = ?18a v ds = 0.5bv dss v dd = ?50v i d = ?18a r g = 9.1 ? i s = ?18a t j = 25c v gs = 0 i f = ?18a t j = 25c d i / d t ?100a/ s v dd ?50v electrical characteristics (t amb = 25c unless otherwise stated) drain ? source breakdown voltage temperature coefficient of breakdown voltage static drain ? source on?state resistance 1 gate threshold voltage forward transconductance 1 zero gate voltage drain current forward gate ? source leakage reverse gate ? source leakage input capacitance output capacitance reverse transfer capacitance total gate charge 1 gate ? source charge 1 gate ? drain (?miller?) charge 1 turn?on delay time rise time turn?off delay time fall time continuous source current pulse source current 2 diode forward voltage reverse recovery time reverse recovery charge forward turn?on time ?100 ?0.087 0.20 0.22 ?2 ?4 6.2 ?25 ?250 ?100 100 1400 600 200 60 13 35.2 35 85 85 65 ?18 ?72 ?4.2 280 3.6 negligible v v/c ? v s ( ? a na pf nc nc ns a v ns c bv dss ? bv dss ? t j r ds(on) v gs(th) g fs i dss i gss i gss c iss c oss c rss q g q gs q gd t d(on) t r t d(off) t f i s i sm v sd t rr q rr t on static electrical ratings notes 1) pulse test: pulse width 300ms, ? 2% 2) repetitive rating ? pulse width limited by maximum junction temperature. dynamic characteristics source ? drain diode characteristics ( ? ) semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omi ssions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders. document number 4020 issue 1
|
